Integrated circuit die stack with a back-side power delivery network

A packaged device comprising:

• a first substrate;
• a memory die disposed on the first substrate;
• and
• an integrated circuit (IC) device disposed on the first substrate and coupled to the memory die, the IC device comprising:
• a first IC die comprising a first carrier substrate, first transistors, and a first power delivery network;
• a second IC die comprising a second carrier substrate, second transistors, and a second power delivery network;
• an IC interposer die, wherein a first surface of the first IC die and a first surface of the second IC die are mounted to the IC interposer die, wherein the first power delivery network is between the IC interposer die and the first transistors and the second power delivery network is between the IC interposer die and the second transistors;
• and
• a third carrier substrate attached to a second surface of the first IC die and a second surface of the second IC die.

A method of forming a packaged device, the method comprising:

• providing a first substrate;
• and
• mounting an integrated circuit (IC) device to the first substrate, wherein the IC device comprises:
• a first IC die comprising a first carrier substrate, first transistors, and a first power delivery network;
• a second IC die comprising a second carrier substrate, second transistors, and a second power delivery network;
• an IC interposer die, wherein a first surface of the first IC die and a first surface of the second IC die are mounted to the IC interposer die, wherein the first power delivery network is between the IC interposer die and the first transistors and the second power delivery network is between the IC interposer die and the second transistors;
• and
• a third carrier substrate attached to a second surface of the first IC die and a second surface of the second IC die.