Thin film transistor and display apparatus comprising the same
AssigneeLG Display Co., Ltd.
InventorsDongyeon KANG, Jaeyoon PARK, Hyeonjoo SEUL
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Abstract
The present disclosure provides a thin film transistor including an active layer; a gate electrode disposed on the active layer and overlapping at least a portion of the active layer; and a hydrogen capture layer disposed on the gate electrode. The active layer includes a channel portion and first and second connecting portions on respective sides of the channel portion. The hydrogen capture layer includes first and second capture patterns spaced apart, wherein portions of each capture pattern overlap the gate electrode in a plan view.
Claims20
A thin film transistor comprising:
- an active layer;
- a gate electrode disposed on the active layer and overlapping at least a portion of the active layer;
- and
- a hydrogen capture layer disposed on the gate electrode,
- wherein the active layer includes:
- a channel portion;
- a first connecting portion connected to one side of the channel portion;
- and
- a second connecting portion connected to the other side of the channel portion,
- wherein the hydrogen capture layer includes a first capture pattern and a second capture pattern that are spaced apart from each other, and
- wherein at least a portion of the first capture pattern and at least a portion of the second capture pattern overlap the gate electrode in a plan view.
A display apparatus comprising:
- a light-emitting diode;
- a thin film transistor electrically connected to the light-emitting diode, the thin film transistor including:
- an active layer on a substrate, the active layer having a channel portion between a first connecting portion and a second connecting portion;
- a gate insulating film on the active layer;
- a gate electrode on the gate insulating film and overlapping the channel region in a plan view;
- an interlayer insulating film on the gate electrode;
- and
- at least one sheet of oxide-based semiconductor material on the interlayer insulating film, the at least one sheet of oxide-based semiconductor material including a plurality of recessed regions, each recessed region having a reduced thickness relative to adjacent regions of the at least one sheet of oxide-based semiconductor material,
- wherein, in plan view, at least one of the recessed regions is disposed to at least partially overlap the first connecting portion and the gate electrode, and at least one of the recessed regions is disposed to at least partially overlap the second connecting portion and the gate electrode.
Dependencies are inferred from the claim text.