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US 2026/0096091 A1Published application
Memory device having ultra-lightly doped region and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorCHUNG-LIN HUANG
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Abstract
The present application provides a memory device having an ultra-lightly doped region and a manufacturing method of the memory device. The memory device includes a semiconductor substrate including a word line extending into the semiconductor substrate, wherein the semiconductor substrate is defined with a source region, a drain region and an ultra-lightly doped region under the drain region, the word line is disposed between the source region and the drain region, and the ultra-lightly doped region is disposed at a sidewall of the word line.
Claims15
A method of manufacturing a memory device, comprising:
- providing a semiconductor substrate;
- forming a word line extending into the semiconductor substrate;
- forming a recess adjacent to the word line;
- and
- implanting dopants into the semiconductor substrate through the recess,
- wherein the dopants collide with the semiconductor substrate exposed through the recess and diffuse across the word line to form an ultra-lightly doped region over a sidewall of the word line.
3 more elements
Dependencies are inferred from the claim text.