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US 2026/0089988 A1Published application
Schottky diode and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsKuo-Hsing Lee, Sheng-Yuan Hsueh, Ting-Hsiang Huang, Guan-Kai Huang, Chi-Horn Pai
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Abstract
A method for fabricating a Schottky diode includes the steps of first forming a fin-shaped structure on a substrate, forming an epitaxial layer in the fin-shaped structure, forming a first contact plug on the epitaxial layer, and then forming a second contact plug on the fin-shaped structure adjacent to the epitaxial layer. Preferably, the first contact plug includes an ohmic contact and the second contact plug includes a Schottky contact.
Claims16
A method for fabricating a Schottky diode, comprising:
- forming a fin-shaped structure on a substrate;
- forming an epitaxial layer in the fin-shaped structure;
- forming a first contact plug on the epitaxial layer, wherein the first contact plug comprises an ohmic contact;
- and
- forming a second contact plug on the fin-shaped structure adjacent to the epitaxial layer, wherein the second contact plug comprises a Schottky contact.
2 more elements
A Schottky diode, comprising:
- a fin-shaped structure on a substrate;
- an epitaxial layer in the fin-shaped structure;
- a first contact plug on the epitaxial layer, wherein the first contact plug comprises an ohmic contact;
- and
- a second contact plug on the fin-shaped structure and adjacent to the epitaxial layer, wherein the second contact plug comprises a Schottky contact.
2 more elements
Dependencies are inferred from the claim text.