Capacitor structure and method of forming the same
AssigneeNanya Technology Corporation
InventorChih-Hsiung HUANG
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Abstract
The present disclosure provides a capacitor structure. The capacitor structure includes a bottom electrode, a first dielectric layer, and a first top electrode. The bottom electrode includes a bottom portion and a side portion, in which the side portion extends upward from an edge of the bottom portion, the side portion includes a first portion and a second portion on the first portion, in which a first width of the first portion is smaller than a second width of the second portion. The first dielectric layer is on the bottom electrode. The first top electrode is on the first dielectric layer.
Claims15
A capacitor, comprising:
- a bottom electrode comprising a bottom portion and a side portion, wherein the side portion extends upward from an edge of the bottom portion, the side portion comprises a first portion and a second portion on the first portion, and a first width of the first portion is smaller than a second width of the second portion;
- a first dielectric layer on the bottom electrode;
- and
- a first top electrode on the first dielectric layer.
A method of forming a capacitor, comprising:
- forming a hard mask layer on a substrate;
- forming a patterned photoresist layer comprising an opening on the hard mask layer;
- removing a portion of the hard mask layer and a portion of the substrate through the opening of the patterned photoresist layer to form a trench;
- forming a bottom electrode in the trench;
- forming a protecting layer on the bottom electrode;
- forming an oxide layer filling the trench and on the protecting layer and a remaining portion of the hard mask layer;
- removing a portion of the oxide layer outside the trench and the remaining portion of the hard mask layer;
- removing a remaining portion of the oxide layer in the trench and the protecting layer to expose the bottom electrode;
- forming a first dielectric layer on the bottom electrode;
- and
- forming a first top electrode on the first dielectric layer.
Dependencies are inferred from the claim text.