Memory with one access transistor coupled to multiple capacitors

An integrated circuit (IC) device, comprising:

• a plurality of transistors, wherein an individual transistor of the plurality of transistors has a region, wherein the region is either a source region or a drain region;
• a first plateline and a second plateline;
• a first capacitor, wherein a first capacitor electrode of the first capacitor is coupled to the region of a first transistor of the plurality of transistors, and a second capacitor electrode of the first capacitor is coupled to the first plateline;
• and
• a second capacitor, wherein a first capacitor electrode of the second capacitor is coupled to the region of a second transistor of the plurality of transistors, and a second capacitor electrode of the second capacitor is coupled to the second plateline,
• wherein the first capacitor electrode of the first capacitor and a capacitor insulator of the first capacitor are substantially coaxial, and a capacitor insulator of the second capacitor and the first capacitor electrode of the second capacitor are substantially parallel.

An integrated circuit (IC) device, comprising:

• a support;
• a first memory cell over the support, the first memory cell comprising a first transistor coupled to a plurality of first capacitors;
• and
• a second memory cell over the support, the second memory cell comprising a second transistor coupled to a plurality of second capacitors;
• wherein:
• a capacitor electrode of a third capacitor and a capacitor insulator of the third capacitor are substantially coaxial,
• a capacitor insulator of a fourth capacitor and a capacitor electrode of the fourth capacitor are substantially parallel, and
• the third capacitor is one capacitor of the plurality of first capacitors or the plurality of second capacitors, and the fourth capacitor is another capacitor of the plurality of first capacitors or the plurality of second capacitors.