Semiconductor device including a vertical channel pillar having a hybrid channel layer
AssigneeSK hynix Inc.
InventorYoung Gwang YOON
Life of this patent
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Abstract
A semiconductor device includes a word line stack over a substrate, the word line stack including a plurality of interlayer insulating layers and a plurality of word lines alternatively stacked, and a vertical channel pillar vertically passing through the word line stack. The vertical channel pillar includes a core insulating layer, a channel layer surrounding a side surface of the core insulating layer, and a memory layer surrounding a side surface of the channel layer. The channel layer includes a silicide channel layer and a silicon channel layer surrounding a side surface of the silicide channel layer.
Claims20
A method of manufacturing a semiconductor device comprising:
- forming an insulating layer stack over a substrate;
- forming a channel hole vertically passing through the insulating layer stack;
- forming a memory layer over an inner wall of the channel hole;
- forming a channel layer over an inner wall of the memory layer;
- and
- forming a core insulating layer over an inner wall of the channel layer,
- wherein forming the channel layer includes:
- forming a silicon channel layer over the inner wall of the memory layer in the channel hole;
- forming a first filling metal over the silicon channel layer in a first region of the channel hole;
- forming a first preliminary silicide layer embedded in the silicon layer by performing a first preliminary silicidation process;
- removing the remaining first filling metal;
- forming a first filling insulating material in the first region of the channel hole;
- transforming the first preliminary silicide layer to a silicide channel layer by performing a main silicidation process;
- removing the first filling insulating layer;
- and
- forming a core insulating layer in the channel hole.
A method of manufacturing a semiconductor device comprising:
- forming an insulating layer stack over a substrate;
- forming a channel hole vertically passing through the insulating layer stack;
- forming a memory layer in an inner wall of the channel hole;
- forming a channel layer over an inner wall of the memory layer;
- and
- forming a core insulating layer over an inner wall of the channel layer to fill the channel hole,
- wherein the forming of the channel layer includes:
- forming a silicon channel layer over the inner wall of the memory layer in the channel hole;
- forming a filling metal over an inner wall of the silicon channel layer;
- forming a silicide channel layer on the inner wall pf the silicon channel layer by performing a silicidation process;
- removing the remaining filling metal;
- and
- forming a core insulating layer over an inner wall of the silicide channel layer to fill the channel hole.
A method of manufacturing a semiconductor device comprising:
- forming an insulating layer stack over a substrate;
- forming a channel hole vertically passing through the insulating layer stack;
- forming a memory layer in an inner wall of the channel hole;
- forming a channel layer over an inner wall of the memory layer;
- and forming a core insulating layer over an inner wall of the channel layer to fill the channel hole,
- wherein forming the channel layer includes:
- forming a silicon channel layer over the inner wall of the memory layer in the channel hole;
- forming a filling metal over an inner wall of the silicon channel layer;
- forming a silicide channel layer between the silicon channel layer and the filling metal layer;
- and
- forming a core insulating layer filling the channel hole.
Dependencies are inferred from the claim text.