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US 2026/0089940 A1Published application
Semiconductor memory device and manufacturing method thereof
AssigneeSK hynix Inc.
InventorsSeung Wook RYU, Ki Hong LEE
Life of this patent
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Abstract
A semiconductor memory device includes a first source layer, a second source layer on the first source layer, a stack structure over the second source layer, and a common source line penetrating the stack structure. The second source layer includes a protective layer in contact with the common source line and a conductive layer surrounding the protective layer.
Claims15
A method of manufacturing a semiconductor memory device, the method comprising:
- forming a source sacrificial structure over a substrate;
- forming a stack structure over the source sacrificial structure;
- forming a trench penetrating the stack structure;
- removing the source sacrificial structure through the trench;
- forming a preliminary conductive layer including a first preliminary conductive part and a second preliminary conductive part, the first preliminary conductive part disposed in a region from which the source sacrificial structure is removed, the second preliminary conductive part disposed in the trench;
- forming a first preliminary protective layer over the first preliminary conductive part such that an air gap is disposed in the region from which the source sacrificial structure is removed;
- forming a second preliminary protective layer over the first preliminary protective layer to fill the air gap;
- removing a portion of the first preliminary protective layer and a portion of the second preliminary protective layer to expose the second preliminary conductive part and a portion of the first preliminary conductive part, wherein the portion of the first preliminary conductive part is exposed via a cavity;
- and
- removing the second preliminary conductive part and the portion of the first preliminary conductive part to expand the cavity.
7 more elements
A method of manufacturing a semiconductor memory device, the method comprising:
- forming a source sacrificial structure;
- alternately stacking insulating layers and gate sacrificial layers over the source sacrificial structure;
- forming a trench penetrating the insulating layers and the gate sacrificial layers;
- forming a first cavity by removing the source sacrificial structure through the trench;
- forming a source layer including a conductive layer in the first cavity, and a first and second protective layers in a second cavity of the conductive layer, wherein a third cavity is formed within the source layer, the third cavity being connected to the trench and exposing sidewalls of the conductive layer, the first protective layer, and the second protective layer;
- removing the gate sacrificial layers between the insulating layers, wherein the first and second protective layers overlaps each area in which the gate sacrificial layers are removed;
- forming gate patterns between the insulating layers;
- and
- forming a common source line in the third cavity and the trench, wherein the common source line is coupled to the source layer.
6 more elements
Dependencies are inferred from the claim text.