Semiconductor device and method for fabricating the same

Abstract

A method for fabricating a semiconductor device includes the steps of first forming a first well region in a substrate, forming a shallow trench isolation (STI) adjacent to two sides of the first well region, forming a gate structure on the substrate, forming doped regions adjacent to two sides of the gate structure, and then forming contact plugs on the doped regions. Preferably, a depth of the first well region is less than a depth of the STI and the first well region and the doped regions have different conductive type.

Dependencies are inferred from the claim text.