Memory device and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorYing-Cheng CHUANG
Life of this patent
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Abstract
A method of forming a memory device includes forming a trench in a substrate, forming a first dielectric layer lining the trench, forming a first conductive layer into the trench, etching back the first conductive layer, resulting in a native oxide layer being formed over the first conductive layer, performing an etching process to remove the native oxide layer to expose the first conductive layer and to trim a portion of the first dielectric layer exposed by the first conductive layer, and forming a second conductive layer into the trench and in contact with the first conductive layer.
Claims20
A method of forming a memory device, comprising:
- forming a trench in a substrate;
- forming a first dielectric layer lining the trench;
- forming a first conductive layer into the trench;
- etching back the first conductive layer, resulting in a native oxide layer being formed over the first conductive layer;
- performing an etching process to remove the native oxide layer to expose the first conductive layer and to trim a portion of the first dielectric layer exposed by the first conductive layer;
- and
- forming a second conductive layer into the trench and in contact with the first conductive layer.
A memory device, comprising:
- a substrate;
- a word line structure embedded in the substrate and comprising:
- a first conductive layer;
- a second conductive layer over the first conductive layer;
- and
- a capping layer over the second conductive layer;
- and
- a gate dielectric layer lining the word line structure and comprising:
- a first portion lining a sidewall of the first conductive layer;
- a second portion lining a sidewall of the second conductive layer;
- and
- a third portion lining a sidewall of the capping layer, wherein a thickness of the second portion of the gate dielectric layer is less than a thickness of the first portion of the gate dielectric layer.
Dependencies are inferred from the claim text.