Semiconductor structure and method of forming the same
AssigneeNanya Technology Corporation
InventorJhen-Yu TSAI
Life of this patent
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Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate and a word line. The word line is embedded in the substrate and includes a high work function layer and a low work function layer on the high work function layer, in which an average work function of the high work function layer is larger than an average work function of the low work function layer, the low work function layer includes a lower portion and an upper portion on the lower portion, and an average grain size of the lower portion is smaller than an average grain size of the upper portion.
Claims20
A semiconductor structure, comprising:
- a substrate;
- and
- a word line embedded in the substrate and comprising a high work function layer and a low work function layer on the high work function layer, wherein an average work function of the high work function layer is larger than an average work function of the low work function layer, the low work function layer comprises a lower portion and an upper portion on the lower portion, and an average grain size of the lower portion is smaller than an average grain size of the upper portion.
A method of forming a semiconductor structure, comprising:
- forming a first work function layer and a second work function layer on the first work function layer in a trench of a substrate, wherein the second work function layer comprises a lower portion and an upper portion on the lower portion, the lower portion has a first average grain size, and the upper portion has a second average grain size;
- and
- annealing the upper portion by a laser annealing to change the second average grain size to a third average grain size, wherein the third average grain size is larger than the first average grain size.
Dependencies are inferred from the claim text.