US 2026/0086464 A1 · METHOD OF MANUFACTURING A PATTERNED PHOTORESIST LAYER OVER A BASE MATERIAL

Abstract

A method of manufacturing a patterned photoresist layer over a base material and a method of manufacturing a plurality of openings in a base layer are provided. The method includes: providing a base material; forming a photoresist layer over the base material, wherein the photoresist layer includes a negative expansion coefficient material; patterning the photoresist layer to form a first actual pattern having a first critical dimension; and applying an energy to the photoresist layer so that the first actual pattern becomes a second actual pattern, wherein the second actual pattern has a second critical dimension different from the first critical dimension of the first actual pattern.

Claims19

Dependent claims

A method of manufacturing a patterned photoresist layer over a base material, comprising:

providing a base material;
determining a first predetermined pattern;
determining a second predetermined pattern according to the first predetermined pattern, wherein a critical dimension of the first predetermined pattern is different from a critical dimension of the second predetermined pattern;
forming a photoresist layer over the base material;
providing a photomask having a mask pattern corresponding to the second predetermined pattern;
patterning the photoresist layer to form a first actual pattern corresponding to the second predetermined pattern through the photomask;
and
changing the first actual pattern to a second actual pattern corresponding to the first predetermined pattern.

5 more elements

Dependencies are inferred from the claim text.

Method of manufacturing a patterned photoresist layer over a base material

Life of this patent

Method of manufacturing a patterned photoresist layer over a base material

Life of this patent

Abstract

Claims19