Mask variability reduction through locality preserving pattern hashes
AssigneeIntel Corporation
InventorsRaghunathan Dhananjay Vinjamur, Mark Andrew Horsch
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Abstract
A method includes generating a hash comprising a plurality of values based on a geometric pattern within a window that represents a portion of a physical design for a semiconductor mask layer, the window including at least a portion of a polygon; determining a displacement value for a segment of the polygon based on the hash; and modifying a position of a segment of the polygon based on the displacement value.
Claims20
At least one machine readable storage medium having instructions stored thereon, the instructions when executed by a machine to cause the machine to:
- generate a hash comprising a plurality of values based on a geometric pattern within a window that represents a portion of a physical design for a semiconductor mask layer, the window including at least a portion of a polygon;
- determine a displacement value for a segment of the polygon based on the hash;
- and
- modify a position of the segment of the polygon based on the displacement value.
A method comprising:
- forming a window around a target segment of a polygon of a semiconductor layout database file;
- generating a hash from a pattern of polygons within the window;
- determining a displacement value for the target segment of the polygon based on the hash;
- and
- modifying a position of the target segment of the polygon based on the displacement value.
An apparatus comprising:
- a memory to store a semiconductor layout database file;
- and
- a processor coupled to the memory, the processor to:
- form a window around a target segment of a polygon of the semiconductor layout database file;
- generate a hash comprising a vector of values based on a geometric pattern within the window;
- determine a displacement value for the target segment based on the hash;
- and
- modify a position of the target segment based on the displacement value.
Dependencies are inferred from the claim text.