Reconstituted wafer product with variable thickness dies containing diamond

A method for semiconductor device processing with a reconstituted wafer product, comprising:

• forming a plurality of die structures by bonding a plurality of dies containing diamond to a corresponding plurality of heatsink-side dies, wherein two or more dies containing diamond in the plurality of die structures are of different thickness, whereby each die structure of the plurality of the die structures includes a die containing diamond bonded to a heatsink-side die;
• attaching the plurality of die structures to a wafer in a manner that provides a thermally conductive connection between the wafer and the plurality of die structures by bonding the die containing diamond in each die structure of the plurality of die structures to a heatsink-side surface of the wafer.

A method for semiconductor device processing with a reconstituted wafer product, comprising:

• bonding a plurality of dies containing diamond to a corresponding plurality of locations on a heatsink side surface of a wafer, wherein two or more dies containing diamond in the plurality of dies containing diamond are of different thickness;
• wherein the plurality of dies containing diamond are bonded to the wafer in a manner that provides a thermally conductive connection between the wafer and the plurality of dies containing diamond.