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US 2026/0076123 A1Published application
High aspect ratio etch with a liner
AssigneeLam Research Corporation
InventorsAmit MUKHOPADHYAY, Qing XU, Merrett WONG, Ilya PISKUN, Gregory Clinton VEBER, Yongsik YU, Francis Sloan ROBERTS, Ragesh PUTHENKOVILAKAM, Kapu Sirish REDDY
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Abstract
A method for etching features in a stack is provided. A patterned mask is formed over the stack. Features are partially etched in the stack through the patterned mask. A helmet mask is deposited over the patterned mask and liner on sidewalls of the features. The stack is etched through the helmet mask.
Claims20
A method for etching features in a stack, comprising:
- a) forming a patterned mask over the stack;
- b) partially etching features in the stack through the patterned mask;
- c) depositing a helmet mask over the patterned mask and liner on sidewalls of the features;
- and
- d) etching the stack through the helmet mask.
2 more elements
A method for etching features in a stack, comprising:
- a) forming a patterned mask over the stack;
- b) partially etching features in the stack through the patterned mask;
- c) depositing a tapered liner on sidewalls of the features, wherein the tapered liner is thicker near tops of the features and thinner nearer bottoms of the features;
- and
- d) etching the stack.
2 more elements
Dependencies are inferred from the claim text.