Semiconductor device and method for fabricating the same

Abstract

A semiconductor device includes a bottom electrode, a protective layer, an insulating layer, a top electrode, a first contact structure and a second contact structure. The bottom electrode includes a first step structure. The first step structure includes a first step surface and a second step surface lower than the first step surface. The protective layer is disposed on the second step surface. The insulating layer is disposed on the first step surface. The top electrode is disposed on the insulating layer. The first contact structure is electrically connected with the bottom electrode. The second contact structure is electrically connected with the top electrode.

Dependencies are inferred from the claim text.