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US 2026/0075804 A1Published application
Semiconductor device and semiconductor memory device
OwnerKasumi YASUDA, Hiroki KAWAIinventors
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Abstract
A semiconductor device includes a channel including an oxide semiconductor and a first electrode in contact with the channel. The first electrode contains conductive oxide containing a first element that is an alkaline earth metal element and a second element that is a transition metal element.
Claims20
A semiconductor device comprising:
- a channel including an oxide semiconductor;
- and
- a first electrode in contact with the channel, wherein
- the first electrode contains conductive oxide containing a first element that is an alkaline earth metal element and a second element that is a transition metal element.
1 more element
A semiconductor memory device comprising:
- a channel including an oxide semiconductor;
- a first electrode in contact with the channel;
- and
- a capacitor electrically connected to the first electrode, wherein
- the first electrode contains conductive oxide containing a first element that is an alkaline earth metal element and a second element that is a transition metal element.
2 more elements
A semiconductor memory device comprising:
- a memory cell array;
- a driver configured to apply a voltage to the memory cell array;
- and
- a control circuit configured to control the driver, wherein
- the memory cell array includes:
- a channel including an oxide semiconductor,
- a first electrode in contact with the channel, and
- a capacitor electrically connected to the first electrode, and
- the first electrode contains conductive oxide containing a first element that is an alkaline earth metal element and a second element that is a transition metal element.
6 more elements
Dependencies are inferred from the claim text.