Method for correcting overlay and method for fabricating semiconductor device comprising the same

A semiconductor manufacturing method with overlay correction, comprising:

• measuring an overlay between a lower pattern formed using a first exposure apparatus and an upper pattern formed using a second exposure apparatus;
• obtaining a measured value of a first overlay parameter among overlay parameters of the overlay;
• obtaining a first correction value of the first overlay parameter;
• obtaining a second correction value of a second overlay parameter from the first correction value of the first overlay parameter;
• transmitting the second correction value of the second overlay parameter to the first exposure apparatus and the second exposure apparatus,
• wherein an exposure method of the first exposure apparatus is different from an exposure method of the second exposure apparatus, and
• wherein the first overlay parameter has a crosstalk relationship with the second overlay parameter;
• and
• using the second correction value of the second overlay parameter to manufacture a semiconductor device.

A method of manufacturing a semiconductor device by using a first exposure apparatus and a second exposure apparatus which use different exposure methods, the method comprising:

• forming a lower pattern on a first semiconductor substrate by using the first exposure apparatus;
• forming an upper pattern on the lower pattern by using the second exposure apparatus;
• measuring an overlay between the lower pattern and the upper pattern;
• obtaining a measured value of a first overlay parameter among overlay parameters of the overlay;
• obtaining a first correction value of the first overlay parameter;
• obtaining a second correction value of a second overlay parameter having a crosstalk relationship with the first overlay parameter, from the first correction value of the first overlay parameter;
• transmitting the second correction value of the second overlay parameter to the first exposure apparatus and the second exposure apparatus;
• performing an exposure process on a second semiconductor substrate by using the first exposure apparatus and the second exposure apparatus according to the transmitted second correction value of the second overlay parameter;
• performing patterning on the second semiconductor substrate;
• and
• performing a subsequent semiconductor process on the second semiconductor substrate,
• wherein, in the performing of the exposure process, the second overlay parameter is corrected by operating a lens of the first exposure apparatus according to the transmitted second correction value of the second overlay parameter, the second overlay parameter is corrected by tilting a reticle stage of the second exposure apparatus around a scan direction of the reticle stage according to the transmitted second correction value of the second overlay parameter, and the first overlay parameter is corrected by an amount depending on a crosstalk ratio in the second correction value of the second overlay parameter in the second exposure apparatus.