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US 2026/0062833 A1Published application
Silicon Carbide Vapor Source Material for use in a Sublimation System for Growing Crystalline Silicon Carbide
AssigneeWolfspeed, Inc.
InventorsValeri Fedorovich Tsvetkov, William Henry Brixius, Steven Herbert Griffiths, Brian Bennett Haidet, Elif Balkas, Caleb Andrew Kent, Yuri I. Khlebnikov
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Abstract
A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.
Claims20
A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide, the silicon carbide source material structure comprising:
- a first layer and a second layer, the first layer being different from the second layer in at least one property.
Dependencies are inferred from the claim text.