Shaped Solid Silicon Carbide Vapor Source Material Structure for use in a Sublimation System for Growing Crystalline Silicon Carbide

Abstract

A silicon carbide source material structure for use in a sublimation system for growing crystalline silicon carbide is provided. The silicon carbide source material structure includes a composite shaped solid. The composite shaped solid may be made by casting, extrusion, 3D printing, graphite conversion, or other suitable process.

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