Semiconductor structure, semiconductor device, and method of manufacturing semiconductor structure

A semiconductor device, comprising:

• a first semiconductor layer comprising a first material having a first bandgap;
• a second semiconductor layer disposed on the first semiconductor layer and comprising a first patterned structure, a second patterned structure, and an interconnect member connecting the first patterned structure and the second patterned structure, wherein the second semiconductor layer comprises a second material having a second bandgap, and the second bandgap is different from the first bandgap;
• and
• a work function metal layer stacked on at least part of the second patterned structure.

A method of forming a semiconductor structure, comprising:

• depositing a first semiconductor layer on a substrate;
• forming a second semiconductor layer on the first semiconductor layer;
• forming an isolation feature laterally surrounding the second semiconductor layer;
• and
• depositing a metal layer fully overlapping the at least a part of the second semiconductor layer.