Semiconductor device and manufacturing method therefor

A semiconductor device comprising:

• a substrate;
• a first dielectric layer provided above the substrate in a first direction;
• a first electrode layer provided above the first dielectric layer such that a first capacitor is formed between the substrate and the first electrode layer;
• a second dielectric layer provided above the first electrode layer;
• and
• a second electrode layer provided above the second dielectric layer such that a second capacitor is formed between the second electrode layer and the first electrode layer,
• wherein the second dielectric layer includes one or more insulating films, and
• wherein at least one of the one or more insulating films is provided on a lower surface and a side surface of the second electrode layer.

A method of manufacturing a semiconductor device, the method comprising:

• forming a first dielectric layer above a substrate;
• forming a first electrode layer above the first dielectric layer and forming a first capacitor between the substrate and the first electrode layer;
• forming a second dielectric layer above the first electrode layer;
• forming a first layer above the second dielectric layer;
• forming an insulating film on a side surface of the first layer;
• removing the first layer after forming the insulating film;
• and
• after removing the first layer, forming a second electrode layer above the second dielectric layer in the insulating film and forming a second capacitor between the first electrode layer and the second electrode layer.