Semiconductor device structure and method for forming the same

A method for forming a semiconductor device structure, comprising:

• forming a dielectric layer over a substrate;
• partially removing the dielectric layer to form a first trench, a second trench, a first hole and a second hole in the dielectric layer, wherein the first hole is under and connected to the first trench, and the second hole is under and connected to the second trench;
• and
• forming a first upper conductive line, a second upper conductive line, a first capacitor via structure and a second capacitor via structure in the first trench, the second trench, the first hole, and the second hole respectively, wherein
• a first extending direction of the first upper conductive line is substantially parallel to a second extending direction of the second upper conductive line in a top view of the first upper conductive line and the second upper conductive line, the first capacitor via structure is adjacent to and spaced apart from the second capacitor via structure, the dielectric layer covers a first end surface of the first capacitor via structure and a second end surface of the second capacitor via structure, the first end surface faces away from the first upper conductive line, and the second end surface faces away from the second upper conductive line.

A semiconductor device structure, comprising:

• a substrate;
• a first lower conductive line over the substrate;
• a dielectric layer over the substrate and the first lower conductive line;
• a first upper conductive line embedded in the dielectric layer;
• a first capacitor via structure in the dielectric layer and under and connected to the first upper conductive line, wherein the first capacitor via structure extends toward and is electrically insulated from the first lower conductive line;
• and
• a second upper conductive line embedded in the dielectric layer, wherein a first linewidth of the first upper conductive line is less than a second linewidth of the second upper conductive line.