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US 2026/0040533 A1Published application
Memory devices with weaved digit lines
AssigneeMicron Technology, Inc.
InventorRussell Allen Benson
Life of this patent
Estimating the term…
Abstract
A variety of applications can include an apparatus having a memory device, where the memory device includes weaved digit lines coupled to memory cells of the memory device. The weaved digit lines can be constructed as metal lines having localized widenings about digit line contacts to which the metal lines are coupled. In some examples, access lines can be constructed having localized widenings about gates of access transistors of memory cells of a memory device.
Claims20
A memory device comprising:
- an array of memory cells;
- a digit line contact coupled to a memory cell of the array;
- and
- a digit line arranged on the digit line contact, the digit line having a localized widening about the digit line contact.
1 more element
A memory device comprising:
- an array of memory cells;
- and
- an access line coupled to a gate contact to a memory cell of the array, the access line having a localized widening about the gate contact.
A method of forming a memory device comprising:
- forming an array of memory cells;
- and
- forming a digit line coupled to a digit line contact to a memory cell of the array with the digit line having a first localized widening about the digit line contact, or forming an access line coupled to a gate contact to the memory cell of the array with the access line having a second localized widening about the gate contact.
Dependencies are inferred from the claim text.