Silicon carbide controlled rectifier device for electrostatic discharge protection

Abstract

A silicon carbide (SiC) controlled rectifier structure for on-chip electrostatic discharge protection of SiC integrated circuits. The SiC controlled rectifier includes a base layer as well as a P-well region and an N-well region positioned above the base layer. The SiC controlled rectifier further includes a doped P+ region and a doped N+ region positioned within the P-well region. The SiC controlled rectifier additionally includes a cathode in electrical communication with the doped P+ region and the doped N+ region of the P-well region. Furthermore, the SiC controlled rectifier includes a doped P+ region and a doped N+ region positioned within the N-well region. Additionally, the SiC controlled rectifier includes an anode in electrical communication with the doped P+ region and the doped N+ region of the N-well region.

Dependencies are inferred from the claim text.