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US 2026/0011567 A1Published application
Etching method and etching apparatus
AssigneeTokyo Electron Limited
InventorsWoonghyun JEUNG, Yasuo ASADA, Kenshiro ASAHI
Life of this patent
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Abstract
An etching method includes: etching a silicon oxide film by supplying a halogen-containing gas, an ammonia gas, and an amine gas as etching gases to a substrate including the silicon oxide film formed on a surface of the substrate.
Claims8
An etching method comprising etching a silicon oxide film by supplying a halogen-containing gas, an ammonia gas, and an amine gas as etching gases to a substrate including the silicon oxide film formed on a surface of the substrate.
An etching apparatus comprising:
- a processing container configured to store a substrate including a silicon oxide film formed on a surface of the substrate;
- and
- a gas supplier configured to supply a halogen-containing gas, an ammonia gas, and an amine gas as etching gases to etch the silicon oxide film.
Dependencies are inferred from the claim text.