Nanoimprint lithography mask and method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming a resist layer over a target layer;
• contacting the resist layer with a stamp including a pattern comprising recesses and projections so that the resist layer fills the recesses in the stamp,
• wherein the stamp comprises:
• an ultraviolet light transmissive substrate having a first main surface, a second surface opposing the first main surface, a third surface opposing the first main surface, and a fourth surface opposing the first main surface;
• a first pattern region and a second pattern region in the second main surface;
• a light absorption layer disposed over the third surface;
• and
• an opaque layer disposed over the fourth surface,
• wherein the fourth surface is closer to the first main surface than the third surface, and the third surface is closer to the first main surface than the second main surface;
• exposing the resist layer to actinic radiation through the stamp thereby curing the resist layer exposed to the actinic radiation;
• removing the stamp from the resist layer thereby providing a pattern in the resist layer disposed over the target layer;
• and
• removing portions of the resist layer not exposed to the actinic radiation.

A mask, comprising:

• a device region including a device pattern;
• an overlapping region surrounding the device region and having a light absorption material;
• and
• a peripheral region surrounding the device region and the overlapping region, and having a light blocking material,
• wherein the light blocking material is at a first level, the light absorption material is at a second level, and the device pattern is at a third level, and
• wherein the first, second, and third levels are at different positions.