Loading patent…
AssigneeApplied Materials, Inc.
InventorsGuangyan ZHONG, Baorui CHENG, Kashish SHARMA, Aykut AYDIN, Rui CHENG, Ping-Hwa HSIEH, Kelvin CHAN, Sahmuganathan VICKNESH, Tien Fak TAN, Ganesh BALASUBRAMANIAN, Xinhai HAN, Abhijit Basu MALLICK, Han WANG, Sze Chieh TAN, Karthik JANAKIRAMAN, Andrea Leoncini, Jungmin KO, Tom S CHOI
Estimating the term…
Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of hardmask films on a substrate. In one embodiment, a method of forming a multi-metal hardmask film on a substrate disposed in a processing chamber, including flowing at least one pretreatment gas into the processing chamber; and flowing a main deposition gas mixture into the processing chamber to form the multi-metal hardmask film, wherein the multi-metal hardmask film comprises a plurality of metals.
A method of forming a multi-metal hardmask film on a substrate disposed in a processing chamber, comprising:
A method of forming a multi-metal hardmask film on a substrate disposed in a processing chamber, comprising:
A hardmask layer disposed on a substrate, comprising:
Dependencies are inferred from the claim text.