Polishing composition, polishing method, and method for manufacturing semiconductor substrate
AssigneeFujimi Incorporated
InventorsRyota MAE, Akane KUMAYAMA, Noriyuki TANAKA, Masaki TADA
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AssigneeFujimi Incorporated
InventorsRyota MAE, Akane KUMAYAMA, Noriyuki TANAKA, Masaki TADA
Estimating the term…
The present disclosure provides a means capable of reducing scratches on a surface of a polished object to be polished (particularly, silicon oxide). The present disclosure is a polishing composition containing abrasive grains, an inorganic salt, an organic onium salt, in which the organic onium salt contains at least one of a tetraalkylammonium salt represented by Chemical Formula 1 below or a tetraalkylphosphonium salt represented by Chemical Formula 2 below, and a zeta potential of the abrasive grains in the polishing composition is negative: in the Chemical Formula 1 and the Chemical Formula 2, R1 to R8 each independently represent an unsubstituted alkyl group having 1 or more and 4 or less carbon atoms, and A− and X− each independently represent a monovalent anion.
A polishing composition comprising:
Dependencies are inferred from the claim text.