Semiconductor device and method for manufacturing the same
AssigneeSK hynix Inc.
InventorsKwan Woo DO, Hyung Keun KIM, Ye Cheon CHO, Jae Sang LEE
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Abstract
A semiconductor device includes a trench formed in a substrate, a gate insulation layer formed to contact a bottom surface and sidewall surfaces of the trench, a first electrode layer formed to contact the gate insulation layer, the first electrode layer comprising titanium, a second electrode layer formed to contact the first electrode layer, the second electrode layer comprising molybdenum and titanium, and a third electrode layer formed to contact the second electrode layer.
Claims20
A semiconductor device comprising:
- a trench formed in a substrate;
- a gate insulation layer formed to contact a bottom surface and sidewall surfaces of the trench;
- a first electrode layer formed to contact the gate insulation layer, the first electrode layer comprising titanium;
- a second electrode layer formed to contact the first electrode layer, the second electrode layer comprising molybdenum and titanium;
- and
- a third electrode layer formed to contact the second electrode layer.
A semiconductor device comprising:
- a gate insulation layer disposed over a substrate;
- a first electrode layer formed to contact the gate insulation layer while containing titanium;
- a second electrode layer formed to contact the first electrode layer while containing molybdenum and titanium;
- and
- a third electrode layer formed to contact the second electrode layer.
A method for manufacturing a semiconductor device, the method comprising:
- forming a gate insulation layer configured to contact a substrate;
- forming a first electrode layer configured to contact the gate insulation layer by repeatedly depositing a reaction gas containing titanium in an in-situ state;
- forming a second electrode layer configured to contact the first electrode layer by repeatedly depositing a reaction gas containing titanium and a reaction gas containing molybdenum in an in-situ state;
- and
- forming a third electrode layer configured to contact the second electrode layer by repeatedly depositing a reaction gas containing titanium in an in-situ state.
Dependencies are inferred from the claim text.