Semiconductor device structure with magnetic structure and method for forming the same

A method for forming a semiconductor device structure, comprising:

• forming a first magnetic structure over a substrate;
• forming a first conductive line and a second conductive line over the first magnetic structure;
• forming a first passivation layer over the first conductive line, the second conductive line, and the first magnetic structure;
• performing a first degas process on the substrate and the first passivation layer;
• forming a first magnetic layer over the first passivation layer;
• performing a second degas process on the substrate and the first magnetic layer;
• forming a second magnetic layer over the first magnetic layer;
• and
• partially removing the first magnetic layer and the second magnetic layer, wherein after the first magnetic layer and the second magnetic layer are partially removed, a first peripheral portion of the first magnetic layer is exposed by the second magnetic layer, and the first magnetic layer and the second magnetic layer together form a second magnetic structure covering the first conductive line, the second conductive line, and the first magnetic structure.

A semiconductor device structure, comprising:

• a substrate;
• and
• a first magnetic structure over the substrate, wherein the first magnetic structure has a top surface and a bottom surface, a width of the first magnetic structure gradually increases from the top surface to the bottom surface, the first magnetic structure comprises a first magnetic layer, a second magnetic layer, a third magnetic layer, a fourth magnetic layer, and a fifth magnetic layer sequentially stacked over the substrate,
• a first peripheral portion of the first magnetic layer is exposed by the second magnetic layer, a second peripheral portion of the second magnetic layer is exposed by the third magnetic layer, a third peripheral portion of the third magnetic layer is exposed by the fourth magnetic layer, a fourth peripheral portion of the fourth magnetic layer is exposed by the fifth magnetic layer, and each of the first peripheral portion and the third peripheral portion is wider than each of the second peripheral portion and the fourth peripheral portion.