Method of correcting registration errors, method of manufacturing mask, and method of manufacturing integrated circuit

A method of manufacturing a mask, the method comprising:

• performing a test exposure;
• extracting registration error data according to a dose difference of beams in a preset process condition, through the test exposure;
• providing a dose map for a pattern area of the mask divided into preset unit areas;
• generating a correction map using the dose map and the registration error data;
• and
• exposing the mask by using the correction map.

A method of manufacturing an integrated circuit, the method comprising:

• providing a wafer including a feature layer;
• forming a photoresist layer on the feature layer;
• preparing a mask for which a registration error has been corrected;
• exposing the photoresist layer using the mask;
• developing the photoresist layer to form a photoresist pattern;
• and
• processing the feature layer using the photoresist pattern,
• wherein the preparing of the mask for which the registration error has been corrected comprises:
• performing a test exposure using an E-beam exposure apparatus;
• extracting registration error data according to a dose difference of E-beams in a preset process condition, through the test exposure;
• providing a dose map for a pattern area of the mask divided into preset unit areas;
• generating a correction map using the registration error data and the dose map;
• and
• exposing the mask using the correction map correcting the registration error of the E-beam exposure apparatus.