Photoresist composition and method of manufacturing integrated circuit device using the same

A photoresist composition comprising:

• an organometallic compound including a central metal and a plurality of organic ligands bonded to the central metal;
• an organic ligand precursor;
• and
• a solvent,
• wherein the plurality of organic ligands included in the organometallic compound is a substituted or unsubstituted C1 to C30 aliphatic hydrocarbon group, or a substituted or unsubstituted C6 to C30 aromatic hydrocarbon group covalently or coordinately bonded to the central metal, and
• wherein the organic ligand precursor is a C1 to C30 aliphatic hydrocarbon group including a first atom with a formal charge of −1 capable of a ligand substitution reaction with at least one of the plurality of organic ligands bonded to the central metal, and a second atom that is a hetero atom with a formal charge of +1 bonded to the first atom, or a substituted or unsubstituted C6 to C30 aromatic hydrocarbon group including the first atom and the second atom.

A method of manufacturing an integrated circuit device, the method comprising:

• forming a photoresist film on a substrate by using a photoresist composition including a central metal, an organometallic compound including a plurality of organic ligands bonded to the central metal, and a solvent;
• exposing a first region that is part of the photoresist film;
• forming a metal structure network in the first region by inducing a desorption reaction of at least part of the plurality of organic ligands from the organometallic compound in the first region by baking the photoresist film including the exposed first region, and by inducing a condensation reaction of a hydroxyl (OH) functional group generated at a site where some of the plurality of organic ligands among the organometallic compound are desorbed;
• and
• forming a photoresist pattern including the metal structure network by developing the photoresist film on which the metal structure network is formed,
• wherein, in the forming of the photoresist film, at least one of the plurality of organic ligands includes an ylide group including a first atom and a second atom,
• wherein the first atom has a formal charge of −1 and is coordinated to the central metal, and
• wherein the second atom is a heteroatom with a formal charge of +1 and is bonded to the first atom.