Memory device and method of forming the same

A device, comprising:

• a first word line and a second word line separated from the first word line, the first word line overlapping the second word line in a top-down view;
• a first bit line between the first and second word lines, the first bit line intersecting the first and second word lines in the top-down view;
• a first word line column and a second word line column disposed on a first side and a second side of the first bit line, respectively, wherein the first and second word line columns overlap the first and second word lines in the top-down view;
• a first conductive via disposed between and electrically coupled to the first word line and the first word line column;
• a second conductive via disposed between and electrically coupled to the second word line and the second word line column, the first and second conductive vias being laterally offset in the top-down view;
• a selector layer lining the first and second sides of the first bit line;
• and
• a memory layer lining the selector layer and connected to the first and second word line columns.

A method, comprising:

• forming a first conductive via on a first word line;
• forming a first bit line over the first conductive via, wherein the first word line extends in a first direction, the first bit line extends in a second direction different from the first direction;
• forming a selector spacer on two opposing sides of the first bit line;
• forming a memory spacer on the selector spacer;
• forming a first word line column and a second word line column in a third direction, wherein the memory spacer lines the first and second word line columns, the first word line column lands on the first conductive via, and the third direction is different from the first and second directions;
• forming a second conductive via on the second word line column;
• and
• forming a second word line on the second conductive via.