Fabricating slit structures in three-dimensional semiconductive devices

A semiconductor device, comprising:

• an array region comprising a first slit structure extending along a first direction;
• and
• a connection region adjacent to the array region along a second direction perpendicular to the first direction,
• wherein the connection region comprises a second slit structure extending along the first direction through an insulating layer that extends along the second direction, and
• wherein the insulating layer comprises an insulating material and ions distributed among the insulating material in the insulating layer.

A method comprising:

• providing a semiconductor structure comprising a first region including a first trench structure and a second region including a second trench structure, wherein the semiconductor structure comprises a first sacrificial film covering the first trench structure, and a second sacrificial film formed on a surface of the second trench structure from an opening of the second trench structure to a bottom of the second trench structure, and wherein the second sacrificial film comprises a first part on a top surface of the second region and a second part on an internal surface of the second trench structure;
• changing at least one characteristic of a region of a sacrificial material, wherein the region of the sacrificial material comprises at least one of the first sacrificial film or the first part of the second sacrificial film;
• and
• etching the second part of the second sacrificial film away from the internal surface of the second trench structure, while at least one part of the first sacrificial film remains to cover the first trench structure.