Etching solution composition, production method for said etching solution composition, and etching method using said etching solution composition
AssigneeKanto Kagaku Kabushiki Kaisha
InventorsHiroki INAZUMI, Toshikazu SHIMIZU, Yuki YOSHIDA
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Abstract
An object of the invention is to provide an etching solution composition which adds an excellent etched surface morphology to a metal to be etched at a suppressed etch rate. The invention relates to an etching solution composition which is obtained by blending at least (A) nitric acid, (B) acetic acid, (C) a phosphorus compound and (D) water and in which the water concentration after blending is 3.0 M or less.
Claims10
An etching solution composition obtained by blending at least (A) nitric acid, (B) acetic acid, (C) a phosphorus compound, and (D) water, wherein the water concentration after blending is 3.0 M or less.
Dependencies are inferred from the claim text.