Resist composition and pattern formation method using the same

A resist composition comprising:

• a first organometallic compound represented by one of Formulae 1-1 to 1-4;
• and
• a second organometallic compound represented by Formula 2, wherein
• the first organometallic compound and the second organometallic compound are different from each other:
• wherein, in Formulae 1-1 to 1-4 and 2,
• M11 and M21 are each independently selected from indium (In), tin (Sn), antimony (Sb), tellurium (Te), thallium (Tl), lead (Pb), bismuth (Bi), or polonium (Po),
• L11 to L14 and L21 to L24 are each independently a single bond or a linear, branched, or cyclic C1-C30 divalent hydrocarbon group,
• a11 to a14 and a21 to a24 are each independently an integer from 1 to 4,
• R11 to R14 and R21 to R24 are each independently a polymerizable group, a substituted or unsubstituted C1-C30 alkyl group, a substituted or unsubstituted C3-C30 cycloalkyl group, a substituted or unsubstituted C3-C30 heterocycloalkyl group, a substituted or unsubstituted C2-C30 alkenyl group, a substituted or unsubstituted C3-C30 cycloalkenyl group, a substituted or unsubstituted C3-C30 heterocycloalkenyl group, a substituted or unsubstituted C2-C30 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C7-C30 arylalkyl group, a substituted or unsubstituted C1-C30 heteroaryl group, or a substituted or unsubstituted C2-C30 heteroarylalkyl group,
• at least one of R21 to R24 is a polymerizable group,
• an adjacent two of R11 to R14 and R21 to R24 are optionally bonded to each other to form a condensed ring,
• b11 to b14 and b21 to b24 are each independently an integer of 1 to 4,
• Y11 to Y13 are each independently O, O(C═O), S, S(C═O), NX14, or N(C═O), and
• X11 to X14 are each independently hydrogen, deuterium, or a linear, branched, or cyclic C1-C30 monovalent hydrocarbon group optionally including a heteroatom.