Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, the method comprising:

• providing a pre-reticle including an overlay mark and an on-cell pattern;
• forming an overlay measurement stack from the pre-reticle, wherein the overlay measurement stack includes a lower pattern and an upper pattern;
• measuring an overlay error between the lower pattern and the upper pattern;
• and
• forming a corrected reticle based on the measured overlay error,
• wherein the forming of the overlay measurement stack includes:
• forming the lower pattern from a first pre-reticle using a first illumination system;
• and
• forming the upper pattern on top of the lower pattern from a second pre-reticle using a second illumination system.

A method for manufacturing a semiconductor device, the method comprising:

• providing a first pre-reticle including first overlay marks;
• providing a second pre-reticle including second overlay marks;
• forming an overlay measurement wafer from the first and second pre-reticles, wherein the overlay measurement wafer includes a lower pattern and an upper pattern;
• measuring an overlay error between the lower pattern and the upper pattern;
• and
• forming a corrected reticle based on the measured overlay error,
• wherein the forming of the overlay measurement wafer includes:
• forming the lower pattern from the first pre-reticle using a first illumination system of a first cell pattern;
• forming a light-transmissive film on the lower pattern;
• and
• forming an upper pattern on the light-transmissive film from the second pre-reticle using a second illumination system of a second cell pattern.