Silicon carbide epitaxial substrate
AssigneeSumitomo Electric Industries, Ltd.
InventorsKyoko OKITA, Naoki KAJI, Tsubasa HONKE
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AssigneeSumitomo Electric Industries, Ltd.
InventorsKyoko OKITA, Naoki KAJI, Tsubasa HONKE
Estimating the term…
A silicon carbide epitaxial substrate includes a silicon carbide substrate and a silicon carbide epitaxial layer. The silicon carbide substrate has a first main surface. The silicon carbide epitaxial layer is provided on the first main surface. The silicon carbide epitaxial layer has one or more blue light-emitting defects. The silicon carbide epitaxial layer has a second main surface. The second main surface is located opposite to an interface between the silicon carbide substrate and the silicon carbide epitaxial layer. The one or more blue light-emitting defects are exposed at the second main surface. When an area density of one or more threading screw dislocations in the first main surface is a first area density, an area density of one or more threading edge dislocations in the first main surface is a second area density, and an area density of the one or more blue light-emitting defects in the second main surface is a third area density, a ratio of the third area density to a sum of the first area density and the second area density is 0.03% or less.
A silicon carbide epitaxial substrate comprising:
Dependencies are inferred from the claim text.