Polishing composition for semiconductor process and manufacturing method of substrate using the same

Abstract

A polishing composition for a semiconductor process includes polishing particles, a polishing pad protectant, and a fluorinated surfactant. The polishing composition for the semiconductor process has an Rm/e value of 2.5% or less, which is a ratio of a number of defects derived from an organic substance as calculated by Equation 1 below. Rm / e = Dm De × 100 ⁢ ( % ) [ Equation ⁢ 1 ] In the Equation 1, a De value is a number of defects detected from a top surface of a substrate after polishing the top surface with the polishing composition for the semiconductor process and etching back the top surface, and a Dm value is a number of defects derived from the organic substance among 100 defects randomly selected from the defects detected from the top surface after the polishing and etching back of the top surface. In these cases, polished and etched surfaces can prevent contamination by particles, especially organic particles.

Dependencies are inferred from the claim text.