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US 2025/0145859 A1Published application
Slurry composition for chemical mechanical polishing
AssigneeKctech Co., Ltd.
InventorsJi Hye KIM, Jae Ik LEE, Dam Bi KIM, Bo Hyeok CHOI
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Abstract
A slurry composition for chemical mechanical polishing (CMP) is provided. The slurry composition includes colloidal silica particles, at least one nonionic compound among dextran, dextrose, and dextrin, an amino acid, a pH buffer, and a pH adjuster. The slurry composition may have a pH of 1 to 4.
Claims10
A slurry composition for chemical mechanical polishing (CMP), the slurry composition comprising:
- colloidal silica particles;
- at least one nonionic compound selected from a group consisting of dextran, dextrose, and dextrin;
- an amino acid;
- a pH buffer;
- and
- a pH adjuster,
- wherein the slurry composition has a pH of 1 to 4.
4 more elements
Dependencies are inferred from the claim text.