Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a first semiconductor region located on the first electrode, the first semiconductor region being of a first conductivity type;
• a pair of gate electrodes located on the first semiconductor region with gate insulating layers respectively interposed, a distance between the gate insulating layers in a second direction perpendicular to a first direction being not less than 150 nm and not more than 450 nm, the first direction being from the first electrode toward the first semiconductor region;
• a second semiconductor region located between the pair of gate electrodes, the second semiconductor region being of a second conductivity type;
• a third semiconductor region located on the second semiconductor region, the third semiconductor region being of the first conductivity type;
• and
• a second electrode located on the pair of gate electrodes with insulating layers respectively interposed, the second electrode including a contact part contacting the third semiconductor region and a portion of the second semiconductor region in the second direction, a length in the second direction of a bottom portion of the contact part being greater than 28 nm and not more than 206 nm.