Low-resistance electron transport in solids
AssigneeJürgen ANDRÄ
InventorJürgen ANDRÄ
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AssigneeJürgen ANDRÄ
InventorJürgen ANDRÄ
Estimating the term…
Voltage-controlled, resistance-free electric current conduction in 2-dimensional electron gases (2DEG) and its technical application at temperatures (T) up to above room temperature can be achieved by electrons with energies E<(EF-kBT) (EF=Fermi energy, k=Boltzmann constant) of a completely filled conduction band of a 2DEG which are exposed to a magnetic field Bz in the z-direction and an electric field Ey in the y-direction, which forces all of them to move in cyclotron motion in the x-y-plane with a common drift velocity vDx in the x-direction. The resulting electric drift current Jx has no resistance, as the electrons involved can neither be accelerated in a sole electric field nor disturbed by scattering from defects, impurities or phonons, as all possible final states of these processes are occupied by other electrons in the 2DEG. Minor losses only occur due to Jy currents of the normally conducting electrons of the 2DEG with energies between E=EF±kBT which are necessary for the generation of the Ey field in the 2DEG.
Low-resistance to resistance-less electrical conductance at temperatures up to above room temperature, wherein a fraction of the electrons of high mobility μ>20 π/Bz m2/Vs located in the conduction band of a solid cannot be accelerated by an electric field and cannot be scattered by ions, defects, impurities or phonons, since all possible final states of these processes are occupied for these electrons, so that this fraction of electrons when exposed to crossed magnetic Bz-fields in the z-direction and electric Ey-fields in the y-direction provide a resistance-free cyclotron drift current in the x-direction, which reduces the overall electrical resistance of this solid.
Dependencies are inferred from the claim text.