US 2025/0098176 A1 · MAGNETIC MEMORY DEVICE

Abstract

A magnetic memory device may include conductive lines provided in cell region and peripheral region, a first insulating layer provided in the cell region and the peripheral region, and surrounding the conductive lines, a second insulating layer provided on the first insulating layer in the cell region and the peripheral region, and on top surfaces of the conductive lines, and data storage patterns provided on the second insulating layer in the cell region and electrically connected to corresponding conductive lines of the conductive lines. The second insulating layer in the peripheral region may include first portions on the top surfaces of the conductive lines, and second portions disposed between the first portions. Top surfaces of the first portions may be disposed at a level higher than top surfaces of the second portions.

Claims20

Dependent claims

A magnetic memory device, comprising:

a plurality of conductive lines provided in a cell region and a peripheral region;
a first insulating layer provided in the cell region and the peripheral region, and surrounding the plurality of conductive lines;
a second insulating layer provided on the first insulating layer in the cell region and the peripheral region, and on top surfaces of the plurality of conductive lines;
and
a plurality of data storage patterns provided on the second insulating layer in the cell region and electrically connected to corresponding first conductive lines of the plurality of conductive lines,
wherein the second insulating layer in the peripheral region comprises a plurality of first portions on the top surfaces of corresponding second conductive lines of the plurality of conductive lines, and a plurality of second portions disposed between the plurality of first portions, and
top surfaces of the plurality of first portions are disposed at a level higher than top surfaces of the plurality of second portions.

4 more elements

A magnetic memory device, comprising:

a substrate including a cell region and a peripheral region;
a plurality of conductive lines provided in the cell region and the peripheral region of the substrate;
a first insulating layer provided on the substrate in the cell region and the peripheral region, and surrounding the conductive lines;
a second insulating layer disposed on the first insulating layer in the cell region to cover top surfaces of corresponding first conductive lines of the plurality of conductive lines;
a plurality of data storage patterns disposed on the second insulating layer in the cell region and electrically connected to the corresponding first conductive lines;
a plurality of insulating patterns disposed on the first insulating layer in the peripheral region on top surfaces of corresponding second conductive lines of the plurality of conductive lines;
and
a peripheral insulating layer disposed on the first insulating layer in the peripheral region and between the plurality of insulating patterns,
wherein the peripheral insulating layer has dielectric constant lower than a dielectric constant of the second insulating layer and a dielectric constant of the plurality of insulating patterns.

6 more elements

A magnetic memory device, comprising:

a substrate including a cell region and a peripheral region;
a plurality of conductive lines provided in the cell region and the peripheral region of the substrate;
a first insulating layer provided on the substrate in the cell region and the peripheral region, surrounding the plurality of conductive lines;
a second insulating layer disposed on the first insulating layer in the cell region and the peripheral region to cover top surfaces of the plurality of conductive lines;
and
a plurality of data storage patterns disposed on the second insulating layer in the cell region and electrically connected to corresponding conductive lines of the plurality of conductive lines,
wherein the second insulating layer in the peripheral region comprises a first portion covering top surfaces of the plurality of conductive lines in the peripheral region, and
the plurality of first portions have a crystal structure different from a crystal structure of the second insulating layer in the cell region.

5 more elements

Dependencies are inferred from the claim text.

Magnetic memory device

Life of this patent

Magnetic memory device

Life of this patent

Abstract

Claims20