Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a substrate;
• bit lines above a top surface of the substrate, the bit lines being apart from each other in a first direction and extending in a second direction crossing the first direction;
• island insulating patterns zigzagging among the bit lines in the first direction and the second direction;
• line insulating layers apart from each other in the first direction, extending in the second direction, and covering the bit lines and portions of the island insulating patterns from below;
• a line shield layer covering the line insulating layers and remaining portions of the island insulating patterns from below, the line shield layer being conductive;
• a pair of active patterns on each of the bit lines;
• a back-gate electrode between the pair of active patterns and extending in the first direction;
• and
• a pair of word lines arranged outside the pair of active patterns and extending in the first direction.

A method of manufacturing a semiconductor device, the method comprising:

• preparing a first substrate including an active layer;
• forming a back-gate electrode extending in a first direction in the active layer;
• forming a pair of active patterns respectively at opposite sides of the back-gate electrode by patterning the active layer;
• forming a pair of word lines outside the pair of active patterns;
• forming bit lines extending across the pair of word lines in a second direction crossing the first direction, the bit lines being in contact with first surfaces of the pair of active patterns;
• forming comb-type insulating patterns in the first direction among the bit lines, the comb-type insulating patterns being apart from each other in the second direction;
• forming line insulating layers covering the bit lines and portions of the comb-type insulating patterns, the line insulating layers being apart from each other in the first direction and extending in the second direction;
• forming a line shield layer covering the line insulating layers and remaining portions of the comb-type insulating patterns;
• forming a base insulating layer covering the line shield layer;
• bonding a second substrate to the base insulating layer;
• turning the second substrate upside down;
• and
• removing the first substrate.