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US 2025/0096122 A1Published application
Vertical antifuse
AssigneeInternational Business Machines Corporation
InventorsAshim Dutta, Chih-Chao Yang, Oscar van der Straten, Shravana Kumar Katakam
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Abstract
A semiconductor structure including a metal sidewall spacer arranged on a vertical sidewall of a dielectric pedestal, a fuse dielectric layer on top of the dielectric pedestal, and a conductive element on top of the fuse dielectric layer and directly above the metal sidewall spacer.
Claims20
A vertical antifuse structure comprising:
- a metal sidewall spacer arranged on a vertical sidewall of a dielectric pedestal;
- a fuse dielectric layer on top of the dielectric pedestal;
- and
- a conductive element on top of the fuse dielectric layer and directly above the metal sidewall spacer.
1 more element
A vertical antifuse structure comprising:
- a metal sidewall spacer arranged on a vertical sidewall of a dielectric pedestal;
- a conductive element directly above the metal sidewall spacer;
- and
- a fuse dielectric layer between and separating the metal sidewall spacer from the conductive element.
1 more element
A vertical antifuse structure comprising:
- a first metal sidewall spacer disposed on a vertical sidewall of a first dielectric pedestal;
- a first conductive element directly above the first metal sidewall spacer;
- a second metal sidewall spacer disposed on a vertical sidewall of a second dielectric pedestal;
- a second conductive element directly above the second metal sidewall spacer;
- and
- a fuse dielectric layer, the fuse dielectric layer arranged between and separating the first metal sidewall spacer from the first conductive element, and the fuse dielectric layer arranged between and separating the second metal sidewall spacer from the second conductive element.
3 more elements
Dependencies are inferred from the claim text.