Via structure with improved substrate grounding

An electronic device, comprising:

• a chip package comprising one or more dies, at least one of the one or more dies comprising
• a semiconductor region extending in a first direction from a first source or drain region to a second source or drain region;
• a gate structure extending in a second direction over the semiconductor region;
• a dielectric layer beneath the gate structure;
• and
• a conductive via spaced from the semiconductor region in the second direction and extending in a third direction along an entire thickness of the gate structure and along an entire thickness of the dielectric layer, wherein the conductive via comprises a foot portion and an arm portion extending from the foot portion, wherein the foot portion is below a bottom surface of the gate structure and wherein the foot portion has a greater width in the second direction than a width in the second direction of any part of the arm portion.

An integrated circuit comprising:

• a semiconductor device having a semiconductor region extending in a first direction from a source or drain region, and a gate structure extending in a second direction over the semiconductor region;
• a dielectric layer beneath the gate structure;
• and
• a via structure spaced from the semiconductor region in the second direction and extending in a third direction along an entire thickness of the gate structure and along an entire thickness of the dielectric layer, the via structure comprising:
• a conductive structure passing through an axial center of the via structure, and
• a dielectric structure along sidewalls of the conductive structure, such that the dielectric structure is between a portion of the conductive structure and the gate structure,
• wherein the conductive structure extends below a bottom surface of the dielectric structure, the bottom surface of the dielectric structure being below a top surface of the dielectric layer.