US 2025/0060659 A1Published application

Reflective mask blank and manufacturing method of reflective mask

AssigneeShin-Etsu Chemical Co., Ltd.

InventorsYukio INAZUKI, Takuro KOSAKA, Taiga OGOSE, Keisuke SAKURAI, Shohei MIMURA, Hideo KANEKO

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Abstract

A fine and preferable pattern of an absorption film can be formed from the absorption film that can be patterned by dry etching using a gas containing oxygen (O) by a reflective mask blank including a substrate, a multilayer reflection film that is formed on one main surface of the substrate, and reflects exposure light, an absorption film that is formed on the multilayer reflection film, and absorbs the exposure light, and an etching mask film containing niobium (Nb) on the absorption film.

Claims7

Dependent claims

A reflective mask blank which is a material for a reflective mask used in EUV lithography utilizing EUV light as exposure light, comprising

a substrate,
a multilayer reflection film that is formed on one main surface of the substrate, and reflects the exposure light, and
an absorption film that is formed on the multilayer reflection film, and absorbs the exposure light, wherein
the absorption film consists of a material that can be dry-etched by a gas comprising oxygen (O), and
the reflective mask blank comprises an etching mask film comprising niobium (Nb) on the absorption film.

2 more elements

Dependencies are inferred from the claim text.