Chemical mechanical polishing solution and usage method thereof

Abstract

The present disclosure provides a chemical mechanical polishing solution comprising cerium oxide particles, an anionic compound, a cationic compound, an inhibitor, and a pH regulator, wherein the inhibitor is a non-ionic polymeric compound; The polishing selectivity ratio of the chemical mechanical polishing solution for the insulation film/polycrystalline silicon is greater than 100. The chemical mechanical polishing solution of the present invention can effectively maintain a high polishing selectivity ratio of the insulation layer to the stop layer, where the stop layer is a polycrystalline silicon stop layer.

Dependencies are inferred from the claim text.