Semiconductor structure
AssigneeNanya Technology Corporation
InventorsWei-Zhong LI, Hsih-Yang CHIU
Life of this patent
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Abstract
A semiconductor structure includes a substrate, a first fuse, a second fuse, a contact structure, and a dielectric layer. The first fuse is located in a fuse region of the substrate and includes a first fuse active region having a first portion and a second portion. The second fuse is located in the fuse region of the substrate and includes a second fuse active region having a third portion and a fourth portion. The contact structure interconnects the second portion and the third portion. The dielectric layer is located between the contact structure and the fuse region of the substrate.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a first fuse in a fuse region of the substrate, the first fuse comprising a first fuse active region having a first portion and a second portion;
- a second fuse in the fuse region of the substrate, the second fuse comprising a second fuse active region having a third portion and a fourth portion;
- a contact structure interconnecting the second portion of the first fuse active region and the third portion of the second fuse active region;
- and
- a dielectric layer between the contact structure and the fuse region of the substrate.
A semiconductor structure, comprising:
- a substrate having a first device region, a second device region, and a fuse region;
- a first transistor above the first device region of the substrate;
- a second transistor above the second device region of the substrate;
- a first fuse electrically connected to the first transistor and in the fuse region;
- a second fuse electrically connected to the second transistor and in the fuse region;
- a contact structure interconnecting the first fuse and the second fuse;
- and
- a dielectric layer between the contact structure and the fuse region of the substrate.
Dependencies are inferred from the claim text.